Metal-Oxide Semiconductor Field Effect Transistor (MOSFET)
Semiconductor devices are critical components of electronic appliances used around the world. For the advancement of such devices, it is important to understand their electrical behavior in depth. The objective of this research is to study transport activity of charge carriers in scaled MOSFET devices through advanced simulation tools. To achieve this, electronic models of MOSFET devices will be simulated. The simulation tool utilized in this research is called TCAD, which simply means technology computer aided design software. TCAD specializes in process, device and circuit simulation.
School:
Clark Atlanta University
Department:
Electrical Engineering
Research Advisor:
Umberto Ravaioli
Department of Research Advisor:
Electrical & Computer Engineering
Year of Publication:
2005